New Percolation Model for Understanding Nonvolatile Resistance-switching Memories
نویسندگان
چکیده
منابع مشابه
CMOS compatible nanoscale nonvolatile resistance switching memory.
We report studies on a nanoscale resistance switching memory structure based on planar silicon that is fully compatible with CMOS technology in terms of both materials and processing techniques employed. These two-terminal resistance switching devices show excellent scaling potential well beyond 10 Gb/cm2 and exhibit high yield (99%), fast programming speed (5 ns), high on/off ratio (10(3)), lo...
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ژورنال
عنوان ژورنال: Physics and High Technology
سال: 2013
ISSN: 1225-2336
DOI: 10.3938/phit.22.026